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Ed to get one.six nm/keV using the experimental yields of 0.527 (0.six keV Ar) and 0.427 (0.six keV N) [94] and 0.seven (0.five keV Cd) [88]. Ysp(TiN)/YEC ranges from 2.5 103 to six 103. The XRD intensity degradations YXD and Ysp(Ti N) are plotted as a function of the electronic BSJ-01-175 supplier stopping energy Se in Figure ten. It appears that the two match on the power-law: YXD = (0.0224Se)1.26 and Ysp = (one.17Se)1.95. The exponents are comparable for XRD intensity degradation and sputtering.Quantum Beam Sci. 2021, 5,14 ofFigure 9. Areal density of sputtered Ti from TiN on SiO2 substrate collected in carbon foil vs. ion fluence for 60 MeV Ar , 89 MeV Ni , 99 MeV Xe (o) and 198 MeV Xe ions. An estimated error of areal density is 20 .Figure 10. XRD intensity degradation YXD (10-12 cm2 ) (o, ) and sputtering yields Ysp (Ti N) ( , x) vs. electronic stopping energy Se (keV/nm). Se is calculated by TRIM1997 (o, ) and by SRIM2013 (, x). Power-law fits are indicated by dotted lines: YXD = (0.0224Se )one.26 and Ysp = (one.17Se )one.95 .4. Discussion 4.one. Comparison of Lattice Disordering with Sputtering The electronic stopping electrical power (Se) dependence of lattice disordering YXD, along with electronic sputtering, is summarized in Table 6, recognizing that the majority of the data have utilised TRIM1997. Effects employing SRIM2013 and TRIM1997 are compared in Section 3. Both exponents of the power-law fits are very similar for SiO2, ZnO, Fe2O3, TiN and WO3 movies, likewise as for KBr and SiC. As pointed out in Part three, it may possibly be seen that the exponent of your lattice disordering NXD is comparable with that of sputtering Nsp, except for Fe2O3, by which Nsp is PSB-603 custom synthesis exceptionally near to unity, as while in the case of Cu2O (Nsp = 1.0) [56] and CuO (Nsp = one.08) [59]. The similarity in the exponent of lattice disordering and sputtering for SiO2, ZnO, Fe2O3, TiN, WO3, KBr and SiC imply that both phenomena originate from similar mechanisms, despite the fact that small displacements and annealing and/or the reduction in disordering via ion-induced defects are concerned while in the lattice disordering, whereas large displacements are concerned in sputtering. The consequence of Fe2O3 indicates the electronic excitation is more productive for lattice disordering. InQuantum Beam Sci. 2021, five,15 ofthe case of CuO, NXD is nearly zero [59]. In Table 6, YXD (10-12 cm2) at Se = ten keV/nm and YXD/Ysp (0-15 cm2) are listed. It really is discovered the ratio YXD/Ysp is an purchase of 10-15 cm2, except for ZnO, the place the sputtering yields are exceptionally modest. Extra information of lattice disordering could be wanted for even more discussion.Table six. Summary of electronic stopping power (Se in keV/nm) dependence of lattice disordering YXD = (BXD Se )NXD for that current effects of SiO2 , ZnO, Fe2 O3 and TiN films, and sputtering yields Ysp = (Bsp Se )Nsp on the existing consequence for TiN. Lattice disordering and sputtering yields of WO3 movie from [58,72], those of KBr and SiC from [56] and sputtering yields of SiO2 , ZnO and Fe2 O3 (see Segment 3). Continuous BXD and Bsp as well as the exponent NXD and Nsp are obtained utilizing TRIM1997 and those utilizing SRIM2013 are in parentheses. YXD at Se = ten keV and YXD /Ysp (10-15 cm2 ) are given.BXD Sample (nm/keV) 0.055 (0.0545) 0.057 (0.0585) 0.029 (0.028) 0.0224 0.07355 0.127 0.0377 NXD (nm/keV) Bsp Nsp YXD (10-12 cm2 ) YXD /Ysp (10-15 cm2 )(Se = 10 keV/nm) SiO2 ZnO Fe2 O3 TiN WO3 KBr SiC 3.4 (2.9) 1.32 (one.16) two.54 (two.28) 1.26 2.65 two.4 1.97 0.58 (0.62) 0.175 one.sixteen (2.2) 1.17 0.65 0.77 one.86 3.0 (three.0) one.57 1.25 (1.05) 1.95 3.6 three.0 1.53 0.13 0.476.